LSK489A SOIC 8L ROHS

LSK489A/B Low Noise, Monolithic Dual N-Channel JFET Amplifier INDUSTRY’S LOWEST INPUT CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET Absolute Maximum Ratings @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150°C Junction Operating Temperature -55 to +150°C Maximum Power Dissipation, TA = 25°C Continuous Power Dissipation, per side 4 Power Dissipation, total 5 300mW TO-71 Top View 500mW Maximum Currents Gate Forward Current SOIC-A Top View SOT-23 Top View IG(F) = 10mA Maximum Voltages Gate to Source VGSS = 60V Gate to Drain VGDS = 60V * For equivalent single version, see LSK189 Features Low Noise (f = 1kHz, NBW = 1Hz) en = 1.8nV/√Hz Low Input Capacitance Ciss = 4pF Features Benefits Applications • Low Noise: en = 1.8nV/√Hz (typ), f = 1kHz, NBW = 1Hz • Very Low Common Source Input Capacitance of CISS = 4pF – typ • High Slew Rate • Low Offset/Drift Voltage • Low Gate Leakage IGSS and IG • High CMRR 102 dB • Tight Differential Voltage Match vs. Current • Improved Op Amp Speed Settling Time Accuracy • Minimum Input Error Trimming Error Voltage • Lower Intermodulation Distortion Due to Low Input Capacitance • Wideband Differential Amplifiers • High Speed Temperature Compensated Single Ended Input Amplifier • High Speed Comparators • Impedance Converters • Sonobouys and Hydrophones • Acoustic Sensors Description The LSK489 is the industry’s lowest input capacitance and low-noise monolithic dual N-Channel JFET. Low input capacitance substantially reduces intermodulation distortion. In addition, these dual JFETs feature tight offset voltage and low drift over temperature range, and are targeted for use in a wide range of precision instrumentation and sensor applications. The LSK489 is available in surface mount plastic SOIC 8L and SOT-23 6L, as well as thru-hole metal TO-71 6L packages. For an equivalent single N-Channel version refer to the LSK189 datasheet. LSK489 TO-71 6L and SOIC 8L are fit, form and pin compatible to the same LSK389 product. The LSK489 provides a dramatic increase in capabilities for a wide range of low-noise applications. The most significant aspect of the LSK489 is how it combines a noise level nearly as low as the LSK389 while having much lower gate-to-drain capacitance, 4pF versus the 25pF. The slightly higher noise of the LSK489, versus the LSK389, is not significant in most instances, while the much lower capacitance enables designers to produce simpler, more elegant circuit designs with fewer devices that cost less in production. Also notice that the LSK489 and LSK389 TO-71 and SOIC packages are the same and pin compatible, therefore, they can be used interchangeably. Like the Linear Systems LSK389, the LSK489 features a unique design construction of interleaving both JFETs on the same piece of silicon to provide excellent matching and thermal tracking, as well a low-noise profile having nearly zero popcorn noise. IDSS range is divided into two segments providing designers improved resolution, which are A grade (ΔIDSS = 6mA) and B grade (ΔIDSS = 7mA). Contact Linear Systems for improved En, IDSS, VGS(off), Δ VGS or any other limits. Based on new limits, LS will assign a new SELXXXX code to be used in shipments. Doc 201151 04/12/2022 Rev# A40 ECN# LSK489 www.linearsystems.com Page 1 of 7 LSK489A/B Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier Matching Characteristics @ 25°C (unless otherwise stated) Symbol VGS1 − VGS2 IDSS1 IDSS2 CMRR Characteristic Min. Typ. Max Units - 8 20 mV VDS = 10V, ID = 1mA Gate to Source Saturation Current Ratio 0.9 - 1.0 - VDS = 10V, VGS = 0V Common Mode Rejection Ratio -20 log│∆VGS1-2/∆VDS│ 95 102 - dB Differential Gate to Source Cutoff Voltage Conditions VDS = 10V to 20V, ID = 200µA en Noise Voltage - 1.8 - nV/√Hz VDS = 15V, ID = 2.0mA, f = 1kHz, NBW = 1Hz en Noise Voltage - 3.5 - nV/√Hz VDS = 15V, ID = 2.0mA, f = 10Hz, NBW = 1Hz CISS Common Source Input Capacitance - 4 - pF CRSS Common Source Reverse Transfer Capacitance VDS = 15V, ID = 500µA, f = 1MHz - 2 - pF Electrical Characteristics @ 25°C (unless otherwise stated) Symbol Characteristic Min. Typ. Max Units Gate to Source Breakdown Voltage -60 - - V VDS = 0, ID = -1nA V(BR)G1 - G2 Gate to Gate Breakdown Voltage ±30 ±45 - V IG= ±1µA, ID=IS=0 A (Open Circuit) VGS(OFF) Gate to Source Pinch-off Voltage -1.5 - -3.5 V VDS = 15V, ID = 1nA VGS Gate to Source Operating Voltage -0.5 - -3.5 V VDS = 15V, ID = 500µA IDSS Drain to Source Saturation Current BVGSS IG LSK489A 2.5 5.5 8.5 LSK489B 8.0 11.5 15.0 - -2 - Gate Operating Current Conditions mA VDG = 15V, VGS = 0 -25 pA VDG = 15V, ID = 200µA -0.8 -10 nA - -100 pA VDG = -15V, VDS = 0 TA = 125°C IGSS Gate to Source Leakage Current Gfs Full Conductance Transconductance 1500 - - µS VDG = 15V, VGS = 0, f = 1kHz Gfs Transconductance 1000 1500 - µS VDG = 15V, ID = 500µA GOS Full Output Conductance - - 40 µS VDG = 15V, VGS = 0 GOS Output Conductance - 1.8 2.7 µS VDG = 15V, ID = 200µA Doc 201151 04/12/2022 Rev# A40 ECN# LSK489 www.linearsystems.com Page 2 of 7 LSK489A/B Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier Package Dimensions TO-71 Six Lead SOT-23 SOT-23 Six Lead SOIC-A 8 Lead Six Lead 0.95 1.90 0.210 0.170 1 6 2 5 3 4 0.35 0.50 2.80 3.00 1.50 1.75 2.60 3.00 0.90 1.30 0.09 0.20 0.049 0.061 0.00 0.15 0.10 0.60 DIMENSIONS IN DIMENSIONS IN MILLIMETERS MILLIMETERS DIMENSIONS IN INCHES DIMENSIONS IN INCHES Notes 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse width ≤2ms. 3. All MIN/TYP/MAX Limits are absolute values. Negative signs indicate electrical polarity only. 4. Derate 2.4 mW/°C above 25°C. 5. Derate 4 mW/°C above 25°C. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Doc 201151 04/12/2022 Rev# A40 ECN# LSK489 www.linearsystems.com Page 3 of 7 LSK489A/B Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier Typical Characteristics Doc 201151 04/12/2022 Rev# A40 ECN# LSK489 www.linearsystems.com Page 4 of 7 LSK489A/B Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier Typical Characteristics (Cont’d) Doc 201151 04/12/2022 Rev# A40 ECN# LSK489 www.linearsystems.com Page 5 of 7 LSK489A/B Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier Typical Characteristics (Cont’d) Doc 201151 04/12/2022 Rev# A40 ECN# LSK489 www.linearsystems.com Page 6 of 7 LSK489A/B Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier Typical Characteristics (Cont’d) Doc 201151 04/12/2022 Rev# A40 ECN# LSK489 www.linearsystems.com Page 7 of 7